The magnetic gap arises from the local interaction anisotropy in the proximity of the Ru disorder. Up to a Ru concentration of x = 0.77, both experiments and first-principles calculations show the Ir J_eff = 1/2 state remains intact. A gigantic magnetic gap greater than 40 meV opens at x = 0.27 and increases with Ru concentration, from 40 meV to >150 meV, rendering the dispersive magnetic excitations in Sr2IrO4 almost momentum independent. We study the evolution of magnetic excitations in the disordered two-dimensional antiferromagnet Sr_2Ir_ 1-xRu_xO_4. Hill, John Cao, Gang Konik, Robert Dean, M. Giant Spin Gap and Magnon Localization in the Disordered Heisenberg Antiferromagnet Sr2Ir 1-xRuxO4Ĭao, Yue Liu, Xuerong Xu, Wenhu Yin, Weiguo Meyers, Derek Kim, Jungho Casa, Diego Upton, Mary Gog, Thomas Berlijn, Tom Alvarez, Gonzalo Yuan, Shujuan Terzic, Jasminka Tranquada, J.
#STELLAR PHOENIX PHOTO RECOVERY FOR MAC V6.0 EN SOHO CODE#
The stopping power calculated with the CasP code is almost in agreement with the experimental results within the accuracy of measurement. The C ion trajectories and flux distributions in crystalline silicon were calculated by Monte Carlo simulation. The validity of the impact parameter dependent stopping power calculated using Grande and Schiwietz's CasP (convolution approximation for swift particles) code was confirmed. The ratios of and channeling to the random stopping power were determined to be around 0.65 and 0.77 for 4.8-6.8 MeV ions, respectively. The scattering angle was set to 90° to avoid an excessive decrease of the kinematic factor. Backscattering spectra were measured for random and channeling incidence along the and axes. The stopping power for C ions with energies in the range of 4.8-6.8 MeV were investigated in a SIMOX (Separation by IMplanted OXygen into silicon) structure of Si( 1 0 0)/SiO2/Si( 1 0 0). Yoneda, Tomoaki Horikawa, Junsei Saijo, Satoshi Arakawa, Masakazu Yamamoto, Yukio Yamamoto, Yasukazu
Stopping power for 4.8-6.8 MeV C ions along and directions in Si This work demonstrates that interface engineering is a feasible way to discover alternative superconductors with higher Tc. This interface-enhanced high-temperature superconductivity is further confirmed by ex situ transport measurements, which revealed an onset superconducting transition temperature above 40 K, nearly two times higher than that of the optimally doped bulk FeT e0. No superconducting gap has been observed on the second UC and thicker FeT e 1 -x S ex films at 5.7 K, indicating the important role of the interface. 1 ≤x ≤0.6 ) films on STO substrates by molecular beam epitaxy and observed U -shaped superconducting gaps (Δ ) up to ˜16.5 meV, nearly ten times the gap value (Δ ˜ 1.7 meV ) of the optimally doped bulk FeT e0. Here we successfully prepared single-UC FeT e 1 -x S ex(0. Whether this scenario could be extended to other superconductors is vital in both identifying the enhanced superconductivity mechanism and further raising the critical transition temperature (Tc).
Recently discovered high-temperature superconductivity in single-unit-cell (UC) FeSe films on SrTi O3 (STO) substrate has stimulated tremendous research interest, both experimental and theoretical. Li, Fangsen Ding, Hao Tang, Chenjia Peng, Junping Zhang, Qinghua Zhang, Wenhao Zhou, Guanyu Zhang, Ding Song, Can-Li He, Ke Ji, Shuaihua Chen, Xi Gu, Lin Wang, Lili Ma, Xu-Cun Xue, Qi-Kun Interface-enhanced high-temperature superconductivity in single-unit-cell FeT e 1 -x S ex films on SrTi O3
This paper presents the structure design, beam dynamics simulation, fabrication and experimental results of the 1 MeV auto-focusing SW linac. The pulsed electron beam of 40 keV, 650 mA and 5 μ s duration is injected from a LaB6 thermionic gun. The RF phase focusing is achieved by introducing an asymmetric field distribution in the first cell of the 1 MeV linac. On this context a 2856 M Hz, 1 Me V, bi-periodic on axis coupled self transverse focused SW linac has been designed and tested. In order to mitigate the industrial requirement it is required to reduce the overall size and weight of the system. S-Band standing wave (SW) linacs in the range of 1-10 MeV have many potential industrial applications world wide. Design and experiments of RF transverse focusing in S-Band, 1 MeV standing wave linac
0 kommentar(er)
